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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1185
DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS Power switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 1200 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 5 7 50 150 -45~150
UNIT V V V A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SD1185
SYMBOL
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
6
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=
800
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICES
Collector cut-off current
VCE=1200V; RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
Switching times
tf
ts
TOR NDU ICO E SEM ANG INCH
DC current gain IC=0.3A ; VCE=5V 10 30 Fall time IC=4A ;IB1=0.8A; IB2=-2A Storage time 1.0
1.0
|I
s
|I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1185
TOR NDU ICO E SEM ANG INCH
Fig.2 outline dimensions (unindicated tolerance:A 0.1mm)
3


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